Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. &#149; Enhancement-mode N-channel SiC technology<BR/>&#149; High Drain-Source breakdown voltages - up to 1200V<BR/>&#149; Multiple devices are easy to parallel and simple to drive<BR/>&#149; High speed switching with low on-resistance<BR/>&#149; Latch-up resistant operation

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency 3rd generation SiC MOSFET technology<BR/>Low impedance package with driver source pin<BR/>8mm of creepage distance between drain and source<BR/>High blocking voltage with low on-resistance<BR/>High-speed switching with low capacitances<BR/>Fast intrinsic diode with low reverse recovery (Qrr)<BR/>Halogen free, RoHS compliant

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The wolfspeeds 650V MOSFETs are optimised for high-performance power electronics applications, including server power supplies, electric vehicle charging systems and many more. 3rd Generation SiC MOSFET technology<BR/>High blocking voltage with low on-resistance<BR/>High speed switching with low capacitances<BR/>Fast intrinsic diode with low reverse recovery (Qrr)<BR/>Halogen free, RoHS compliant

The Wolfspeed Silicon Carbide Power MOSFET C3MTM MOSFET Technology is in N-Channel Enhancement Mode. The wolfspeeds Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs is a range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. 3rd Generation SiC MOSFET technology<BR/>Low inductance package with driver source pin<BR/>7mm of creepage distance between drain and source<BR/>High blocking voltage with low on-resistance<BR/>High speed switching with low capacitances<BR/>Fast intrinsic diode with low reverse recovery (Qrr)<BR/>Halogen free, RoHS compliant

The Wolfspeed 1200 V, 16 mΩ All-Silicon Carbide Half-Bridge Module. The Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules. Ultra-Low Loss<BR/>High Frequency Operation<BR/>Zero Turn-Off Tail Current from MOSFET<BR/>Normally-Off, Fail-Safe Device Operation

The Wolfspeed 1200 V, 11 mΩ All-Silicon Carbide Half-Bridge Module. The Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules. Ultra-Low Loss<BR/>High Frequency Operation<BR/>Zero Turn-Off Tail Current from MOSFET<BR/>Normally-Off, Fail-Safe Device Operation

The Wolfspeed 1200 V, 11 mΩ All-Silicon Carbide Half-Bridge Module. The Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules. Ultra-Low Loss<BR/>High Frequency Operation<BR/>Zero Turn-Off Tail Current from MOSFET<BR/>Normally-Off, Fail-Safe Device Operation

The Wolfspeed Silicon Carbide Schottky Diode comes under E-Series Automotive . The Wolfspeed&#146;s 1200V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together. 4th Generation SiC Merged PIN Schottky Technology<BR/>Zero Reverse Recovery Current<BR/>High-Frequency Operation<BR/>Temperature-Independent Switching Behaviour<BR/>AEC-Q101 Qualified and PPAP Capable<BR/>Humidity Resistant

Silicon Carbide Power MOSFET, C3M Series, Cree Inc. New C3M Silicon Carbide (SiC) MOSFET technology<BR/>Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range<BR/>New low-impedance package with driver source<BR/>8 mm of creepage/clearance between Drain and Source<BR/>High-speed switching with low output capacitance<BR/>High blocking voltage with low Drain-Source On-State Resistance<BR/>Avalanche ruggedness<BR/>Fast intrinsic diode with low Reverse Recovery

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. &#149; 600, 650, 1200 and 1700 Voltage ratings<BR/>&#149; Zero reverse recovery current and forward recovery voltage<BR/>&#149; Temperature-independent switching behaviour<BR/>&#149; Extremely fast switching times with minimal losses<BR/>&#149; Positive temperature coefficient forward voltage<BR/>&#149; Devices can be paralleled without thermal runaway<BR/>&#149; Reduction in heatsink requirements<BR/>&#149; Optimized for PFC boost diode applications

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. &#149; 600, 650, 1200 and 1700 Voltage ratings<BR/>&#149; Zero reverse recovery current and forward recovery voltage<BR/>&#149; Temperature-independent switching behaviour<BR/>&#149; Extremely fast switching times with minimal losses<BR/>&#149; Positive temperature coefficient forward voltage<BR/>&#149; Devices can be paralleled without thermal runaway<BR/>&#149; Reduction in heatsink requirements<BR/>&#149; Optimized for PFC boost diode applications

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. &#149; 600, 650, 1200 and 1700 Voltage ratings<BR/>&#149; Zero reverse recovery current and forward recovery voltage<BR/>&#149; Temperature-independent switching behaviour<BR/>&#149; Extremely fast switching times with minimal losses<BR/>&#149; Positive temperature coefficient forward voltage<BR/>&#149; Devices can be paralleled without thermal runaway<BR/>&#149; Reduction in heatsink requirements<BR/>&#149; Optimized for PFC boost diode applications