Higher efficiencyIncrease system level power densityEssentially no switching lossesReduction of heat-sink requirementsParallel devices without thermal runawayNew 6th generation technologyLow forward voltage VFZero reverse recovery currentHigh-frequency operationTemperature-independent switching behaviourExtremely fast switchingPositive temperature coefficient on VF

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers. Minimum of 1200V Vbr across entire operating temperature rangeNew low-impedance package with driver source> 7mm of creepage/clearance between drain and sourceHigh-speed switching with low output capacitanceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive

The Wolfspeed Silicon Carbide Schottky Diode comes under E-Series Automotive . The Wolfspeed’s 1200V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together. 4th Generation SiC Merged PIN Schottky TechnologyZero Reverse Recovery CurrentHigh-Frequency OperationTemperature-Independent Switching BehaviourAEC-Q101 Qualified and PPAP CapableHumidity Resistant

Replace bipolar with unipolar rectifiersEssentially no switching lossesHigher efficiencyReduction of heat-sink requirementsParallel devices without thermal runaway600-volt Schottky rectifier Zero reverse recovery current Zero forward recovery voltage High-frequency operation Temperature-independent switching behaviour Extremely fast switching Positive temperature coefficient on VF

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. • Enhancement-mode N-channel SiC technology• High Drain-Source breakdown voltages - up to 1200V• Multiple devices are easy to parallel and simple to drive• High speed switching with low on-resistance• Latch-up resistant operation

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings• Zero reverse recovery current and forward recovery voltage• Temperature-independent switching behaviour• Extremely fast switching times with minimal losses• Positive temperature coefficient forward voltage• Devices can be paralleled without thermal runaway• Reduction in heatsink requirements• Optimized for PFC boost diode applications

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings• Zero reverse recovery current and forward recovery voltage• Temperature-independent switching behaviour• Extremely fast switching times with minimal losses• Positive temperature coefficient forward voltage• Devices can be paralleled without thermal runaway• Reduction in heatsink requirements• Optimized for PFC boost diode applications

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings• Zero reverse recovery current and forward recovery voltage• Temperature-independent switching behaviour• Extremely fast switching times with minimal losses• Positive temperature coefficient forward voltage• Devices can be paralleled without thermal runaway• Reduction in heatsink requirements• Optimized for PFC boost diode applications

Wolfspeed Silicon Carbide Power MOSFETs Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. • Enhancement-mode N-channel SiC technology• High Drain-Source breakdown voltages - up to 1200V• Multiple devices are easy to parallel and simple to drive• High speed switching with low on-resistance• Latch-up resistant operation

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings• Zero reverse recovery current and forward recovery voltage• Temperature-independent switching behaviour• Extremely fast switching times with minimal losses• Positive temperature coefficient forward voltage• Devices can be paralleled without thermal runaway• Reduction in heatsink requirements• Optimized for PFC boost diode applications

Z-Rec™ Silicon Carbide Schottky Diodes, Wolfspeed A range of Wolfspeed SiC (Silicon Carbide) Schottky diodes offering significant improvements over standard Schottky barrier diodes. SiC diodes provide a much higher breakdown field strength and greater thermal conductivity coupled with a significant reduction in power-loss at high switching frequencies. Sic diodes are the perfect choice in high efficiency, high-voltage applications such as switch-mode power supplies and high-speed inverters. • 600, 650, 1200 and 1700 Voltage ratings• Zero reverse recovery current and forward recovery voltage• Temperature-independent switching behaviour• Extremely fast switching times with minimal losses• Positive temperature coefficient forward voltage• Devices can be paralleled without thermal runaway• Reduction in heatsink requirements• Optimized for PFC boost diode applications

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information. Minimum of 1200V Vbr across entire operating temperature rangeHigh-speed switching with low output capacitanceHigh blocking voltage with low RDS(on)Fast intrinsic diode with low reverse recovery (Qrr)Easy to parallel and simple to drive