The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
AEC Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
N-Channel MOSFET, 1.5 A, 1200 V, 3-Pin H²PAK-2 STH2N120K5-2AG
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STH2N120K5-2AG
Enrgtech Part No:
ET19488974
Warranty:
Manufacturer
£ 3.72
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
1.5 A
Maximum Drain Source Voltage:
1200 V
Series:
MDmesh K5
Package Type:
H²PAK-2
Mounting Type:
Surface Mount
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
