SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Wave soldering guarantee
Computing
Consumer
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Automation
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 30 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)
Lower switching loss
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Internal Gate resistance: 7.0 ohm
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 170 mΩ
Wave soldering guarantee
Computing
Consumer
Industrial
Telecom / Server
Solar inverter / UPS
EVC
Automation
N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220 FCP067N65S3
Manufacturer:
onsemi
Manufacturer Part No:
FCP067N65S3
Enrgtech Part No:
ET14518278
Warranty:
Manufacturer
£ 2.39
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
44 A
Maximum Drain Source Voltage:
650 V
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
67 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Minimum Gate Threshold Voltage:
2.5V
Maximum Power Dissipation:
312 W
Transistor Configuration:
Single
