The STMicroelectronics Power MOSFET developed using the Super MESH technology, an optimization of the well established Power MESH. In addition to a significant reduction in on resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitance
Zener protected
Gate charge minimized
Very low intrinsic capacitance
Zener protected
N-Channel MOSFET, 2.4 A, 600 V, 3-Pin IPAK STD3NK60Z-1
Manufacturer:
STMicroelectronicsManufacturer Part No:
STD3NK60Z-1
Enrgtech Part No:
ET11827122
Warranty:
Manufacturer
£ 0.42
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
2.4 A
Maximum Drain Source Voltage:
600 V
Package Type:
IPAK
Series:
SuperMESH
Mounting Type:
Through Hole
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
