The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Dual N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7AG
Manufacturer:
STMicroelectronics
Manufacturer Part No:
SCTH35N65G2V-7AG
Enrgtech Part No:
ET19616693
Warranty:
Manufacturer
£ 11.75
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
45 A
Maximum Drain Source Voltage:
650 V
Package Type:
H2PAK-7
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
0.067 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
5V
Transistor Material:
Si
Number of Elements per Chip:
2
