The Infineon design of Cool MOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.
Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products
Significant reduction of switching and conduction losses Excellent ESD robustness >2kV (HBM) for all products
Silicon N-Channel MOSFET, 76 A, 600 V, 4-Pin TO-247-4 IPZA60R037P7XKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPZA60R037P7XKSA1
Enrgtech Part No:
ET21632834
Warranty:
Manufacturer
£ 3.38
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Channel Type:
N
Maximum Continuous Drain Current:
76 A
Maximum Drain Source Voltage:
600 V
Series:
CoolMOS™
Package Type:
TO-247-4
Mounting Type:
Through Hole
Pin Count:
4
Maximum Drain Source Resistance:
0.037 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Silicon
Number of Elements per Chip:
1
