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ipd30n06s223atma2 N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IPD30N06S223ATMA2
ipd30n06s223atma2 N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon IPD30N06S223ATMA2
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. These are robust packages with superior quality and reliability. It is Automotive AEC Q101 qualified
100% Avalanche tested
It has 175°C operating temperature
Infineon

N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S223ATMA2

Manufacturer:
Infineon
Manufacturer Part No:
IPD30N06S223ATMA2
Enrgtech Part No:
ET21606536
Warranty:
Manufacturer
£ 0.28

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Channel Type:

N

Maximum Continuous Drain Current:

30 A

Maximum Drain Source Voltage:

55 V

Series:

OptiMOS™

Package Type:

TO-252

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.023 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Transistor Material:

Si

Number of Elements per Chip:

1

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