N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

Channel Type:

N

Maximum Continuous Drain Current:

272 A

Maximum Drain Source Voltage:

100 V

Package Type:

D2PAK (TO-263)

Series:

NexFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

2.8 mΩ

Channel Mode:

Enhancement

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Number of Elements per Chip:

1

Typical Gate Charge @ Vgs:

118 nC @ 0 V

Width:

9.65mm

Transistor Material:

Si

Length:

10.67mm

Maximum Operating Temperature:

+175 °C

Forward Diode Voltage:

1.1V

Minimum Operating Temperature:

-55 °C

Height:

4.83mm