The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are Easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs.
Fully optimized portfolio
Integrated Zener Diode ESD protection
Integrated Zener Diode ESD protection
N-Channel MOSFET, 6 A, 800 V, 3-Pin IPAK IPS80R900P7AKMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPS80R900P7AKMA1
Enrgtech Part No:
ET21606567
Warranty:
Manufacturer
£ 0.33
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Channel Type:
N
Maximum Continuous Drain Current:
6 A
Maximum Drain Source Voltage:
800 V
Package Type:
IPAK (TO-251)
Series:
CoolMOS™ P7
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.9 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Number of Elements per Chip:
1
Transistor Material:
Si
