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ipd90n10s4l06atma1 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD90N10S4L06ATMA1
ipd90n10s4l06atma1 N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD90N10S4L06ATMA1
The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency. N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
Infineon

N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD90N10S4L06ATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD90N10S4L06ATMA1
Enrgtech Part No:
ET21617604
Warranty:
Manufacturer
£ 0.54

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Channel Type:

N

Maximum Continuous Drain Current:

90 A

Maximum Drain Source Voltage:

100 V

Series:

OptiMOS™ -T2

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.0066 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.1V

Number of Elements per Chip:

1

Transistor Material:

Si

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