

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.
N-channel - Enhancement mode
MSL1 up to 260°C peak reflow
175°C operating temperature
MSL1 up to 260°C peak reflow
175°C operating temperature

N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK IPD90N10S4L06ATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPD90N10S4L06ATMA1
Enrgtech Part No:
ET21617604
Warranty:
Manufacturer
£ 0.54
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Channel Type:
N
Maximum Continuous Drain Current:
90 A
Maximum Drain Source Voltage:
100 V
Series:
OptiMOS™ -T2
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0066 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.1V
Number of Elements per Chip:
1
Transistor Material:
Si