The Infineon HEXFET series N-channel power MOSFET. The HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Lead-Free
N-Channel MOSFET, 57 A, 100 V, 3-Pin D2PAK IRF3710STRLPBF
Manufacturer:
Infineon
Manufacturer Part No:
IRF3710STRLPBF
Enrgtech Part No:
ET21617622
Warranty:
Manufacturer
£ 0.64
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Channel Type:
N
Maximum Continuous Drain Current:
57 A
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Series:
HEXFET
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.023 Ω
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Si
Number of Elements per Chip:
1
