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ipd30n06s4l23atma2 N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK Infineon IPD30N06S4L23ATMA2
ipd30n06s4l23atma2 N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK Infineon IPD30N06S4L23ATMA2
The Infineon offers a wide range of 55V-60V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages and ranging RDS(on) from 1.5mΩ up to 160mΩThe new 60V automotive MOSFET family with OptiMOS5 technology delivers more power and leading performance. OptiMOS 5 provides reduced conduction losses optimized for drives and power conversion applications. The smaller leadless packages SSO8 (5x6mm2) and S3O8(3x3mm2) enable space savings by more than 50% compared to the area of a DPAK. N-channel - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
world's lowest RDS at 60V (on)
highest current capability
lowest switching and conduction power losses for highest thermal efficiency
robust packages with superior quality and reliability
Optimized total gate charge enables smaller driver output stages
Infineon

N-Channel MOSFET Transistor & Diode, 30 A, 60 V, 3-Pin DPAK IPD30N06S4L23ATMA2

Manufacturer:
Infineon
Manufacturer Part No:
IPD30N06S4L23ATMA2
Enrgtech Part No:
ET21626896
Warranty:
Manufacturer
£ 0.50

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Channel Type:

N

Maximum Continuous Drain Current:

30 A

Maximum Drain Source Voltage:

60 V

Package Type:

TO-252

Series:

OptiMOS™

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.023 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

16V

Number of Elements per Chip:

1

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