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ipb033n10n5lfatma1 N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK Infineon IPB033N10N5LFATMA1
ipb033n10n5lfatma1 N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK Infineon IPB033N10N5LFATMA1
The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
Infineon

N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK IPB033N10N5LFATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPB033N10N5LFATMA1
Enrgtech Part No:
ET21626885
Warranty:
Manufacturer
£ 1.38

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Channel Type:

N

Maximum Continuous Drain Current:

170 A

Maximum Drain Source Voltage:

100 V

Package Type:

D2PAK (TO-263)

Series:

OptiMOS™ 5

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

0.0033 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4.1V

Number of Elements per Chip:

1

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