

The Infineon OptiMOS linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Combination of low R DS(on) and wide safe operating area (SOA)
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time
High max. pulse current
High continuous pulse current
Rugged linear mode operation
Low conduction losses
Higher in-rush current enabled for faster start-up and shorter down time

N-Channel MOSFET Transistor & Diode, 170 A, 100 V, 3-Pin D2PAK IPB033N10N5LFATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPB033N10N5LFATMA1
Enrgtech Part No:
ET21626885
Warranty:
Manufacturer
£ 1.38
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
170 A
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK (TO-263)
Series:
OptiMOS™ 5
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.0033 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.1V
Number of Elements per Chip:
1