

The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V Cool MOS G7 super junction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards

Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin DDPAK IPDD60R080G7XTMA1
Manufacturer:
Infineon
Manufacturer Part No:
IPDD60R080G7XTMA1
Enrgtech Part No:
ET21626902
Warranty:
Manufacturer
£ 1.87
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
83 A
Maximum Drain Source Voltage:
650 V
Series:
CoolMOS™ G7
Package Type:
DDPAK
Mounting Type:
Surface Mount
Pin Count:
10
Maximum Drain Source Resistance:
0.08 O
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
2