The Infineon CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Optimized for fly-back topologies
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
Extremely low switching loss
12 V / 0 V gate-source voltage compatible with fly-back controllers
Fully controllable dV/dt for EMI optimization
SMD package with enhanced creepage and clearance distances, > 7 mm
N-Channel MOSFET, 7.4 A, 1700 V, 7-Pin D2PAK IMBF170R650M1XTMA1
Manufacturer:
Infineon
Manufacturer Part No:
IMBF170R650M1XTMA1
Enrgtech Part No:
ET21632893
Warranty:
Manufacturer
£ 1.60
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Channel Type:
N
Maximum Continuous Drain Current:
7.4 A
Maximum Drain Source Voltage:
1700 V
Package Type:
TO-263-7
Series:
IMBF1
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
650 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Number of Elements per Chip:
1
