

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

Silicon N-Channel MOSFET, 320 A, 40 V, 7-Pin D2PAK-7 AUIRF2804STRL7P
Manufacturer:
Infineon
Manufacturer Part No:
AUIRF2804STRL7P
Enrgtech Part No:
ET21632774
Warranty:
Manufacturer
£ 1.43
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Channel Type:
N
Maximum Continuous Drain Current:
320 A
Maximum Drain Source Voltage:
40 V
Series:
HEXFET
Package Type:
D2PAK-7
Mounting Type:
Surface Mount
Pin Count:
7
Maximum Drain Source Resistance:
0.0016 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Transistor Material:
Silicon
Number of Elements per Chip:
1