The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
N-Channel MOSFET, 13 A, 600 V, 3-Pin DPAK IPD60R180C7ATMA1
Manufacturer:
InfineonManufacturer Part No:
IPD60R180C7ATMA1
Enrgtech Part No:
ET21632916
Warranty:
Manufacturer
£ 0.82
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
13 A
Maximum Drain Source Voltage:
600 V
Series:
CoolMOS™ C7
Package Type:
DPAK (TO-252)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
180 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Si
