Deliver to United Kingdom

Oops! We're currently experiencing technical difficulties with our checkout process. For assistance, please contact support at info@enrgtechglobal.com.

ipdd60r190g7xtma1 N-Channel MOSFET, 13 A, 600 V, 10-Pin DDPAK Infineon IPDD60R190G7XTMA1
ipdd60r190g7xtma1 N-Channel MOSFET, 13 A, 600 V, 10-Pin DDPAK Infineon IPDD60R190G7XTMA1
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies. Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Infineon

N-Channel MOSFET, 13 A, 600 V, 10-Pin DDPAK IPDD60R190G7XTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPDD60R190G7XTMA1
Enrgtech Part No:
ET21632917
Warranty:
Manufacturer
£ 0.69

Checking for live stock

Channel Type:

N

Maximum Continuous Drain Current:

13 A

Maximum Drain Source Voltage:

600 V

Series:

CoolMOS™ G7

Package Type:

DDPAK

Mounting Type:

Surface Mount

Pin Count:

10

Maximum Drain Source Resistance:

190 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Number of Elements per Chip:

1

Transistor Material:

Si

Related products