Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency. Features • 700 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)
• Fast switching performance with robust body diode
• 100% Avalanche Tested
• RoHS Compliant
• Typ. RDS(on) = 296 m
• Internal Gate Resistance: 0.9