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ipd80r1k4ceatma1 N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
ipd80r1k4ceatma1 N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level. It is RoHS compliant
Infineon

N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK IPD80R1K4CEATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPD80R1K4CEATMA1
Enrgtech Part No:
ET21696028
Warranty:
Manufacturer
£ 0.32

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Channel Type:

N

Maximum Continuous Drain Current:

3.9 A

Maximum Drain Source Voltage:

800 V

Package Type:

DPAK (TO-252)

Series:

CoolMOS™ CE

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

1.4 Ω

Maximum Gate Threshold Voltage:

3.9V

Number of Elements per Chip:

1

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