The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
Manufacturer:
Toshiba
Manufacturer Part No:
SSM3J356R,LF(T
Enrgtech Part No:
ET17497780
Warranty:
Manufacturer
£ 0.15
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Channel Type:
P
Maximum Continuous Drain Current:
2 A
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
4e+008 Ω
Maximum Gate Threshold Voltage:
2V
Number of Elements per Chip:
1
Transistor Material:
Silicon
