Dual N-Channel MOSFET, 9.1 A, 11 A, 30 V, 8-Pin SOIC IRF7907TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

9.1 A, 11 A

Maximum Drain Source Voltage:

30 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

13.7 mΩ, 20.5 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.35V

Minimum Gate Threshold Voltage:

1.35V

Maximum Power Dissipation:

2 W

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

14 nC @ 4.5 V, 6.7 nC @ 4.5 V

Length:

5mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

2

Width:

4mm

Height:

1.5mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1V