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sihk155n60e-t1-ge3 Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 Vishay SIHK155N60E-T1-GE3
sihk155n60e-t1-ge3 Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 Vishay SIHK155N60E-T1-GE3
sihk155n60e-t1-ge3 Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 Vishay SIHK155N60E-T1-GE3
sihk155n60e-t1-ge3 Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 Vishay SIHK155N60E-T1-GE3
The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon. 4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
Vishay

Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 SIHK155N60E-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIHK155N60E-T1-GE3
Enrgtech Part No:
ET24597579
Warranty:
Manufacturer
£ 4.46

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Channel Type:

N

Maximum Continuous Drain Current:

19 A

Maximum Drain Source Voltage:

600 V

Package Type:

10 x 12

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Number of Elements per Chip:

1

Transistor Material:

Silicon

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