N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

Channel Type:

N

Maximum Continuous Drain Current:

120 A

Maximum Drain Source Voltage:

60 V

Series:

OptiMOS™ -T2

Package Type:

D2PAK (TO-263)

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

0.002 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Number of Elements per Chip:

1

Transistor Material:

Si