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sirs4301dp-t1-ge3 Silicon P-Channel MOSFET, 227 A, 30 V, 8-Pin SO-8 Vishay SIRS4301DP-T1-GE3
sirs4301dp-t1-ge3 Silicon P-Channel MOSFET, 227 A, 30 V, 8-Pin SO-8 Vishay SIRS4301DP-T1-GE3
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon. TrenchFET power MOSFET
100 percent Rg and UIS tested
Enhance power dissipation and lower RthJC
Fully lead (Pb)-free device
Vishay

Silicon P-Channel MOSFET, 227 A, 30 V, 8-Pin SO-8 SIRS4301DP-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIRS4301DP-T1-GE3
Enrgtech Part No:
ET25158198
Warranty:
Manufacturer
£ 3.50

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Channel Type:

P

Maximum Continuous Drain Current:

227 A

Maximum Drain Source Voltage:

30 V

Package Type:

SO-8

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Transistor Material:

Silicon

Number of Elements per Chip:

1

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