Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC IRF7303TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

4.9 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOIC

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

80 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

4mm

Transistor Material:

Si

Length:

5mm

Typical Gate Charge @ Vgs:

25 nC @ 10 V

Number of Elements per Chip:

2

Maximum Operating Temperature:

+150 °C

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1V

Height:

1.5mm