The Infineon design of Cool MOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Low gate charge, low output charge
Superior commutation ruggedness
Qualified for standard grade applications according to JEDEC standards
Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin TO-220 FP IPA60R180C7XKSA1
Manufacturer:
Infineon
Manufacturer Part No:
IPA60R180C7XKSA1
Enrgtech Part No:
ET21632791
Warranty:
Manufacturer
£ 0.68
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Channel Type:
N
Maximum Continuous Drain Current:
9 A
Maximum Drain Source Voltage:
650 V
Series:
CoolMOS™
Package Type:
TO-220 FP
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
0.18 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Number of Elements per Chip:
1
Transistor Material:
Silicon
