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iqe030n06nm5scatma1 SiC N-Channel MOSFET, 132 A, 60 V, 8-Pin PG-WHSON-8 Infineon IQE030N06NM5SCATMA1
iqe030n06nm5scatma1 SiC N-Channel MOSFET, 132 A, 60 V, 8-Pin PG-WHSON-8 Infineon IQE030N06NM5SCATMA1
The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the art thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality. High efficiency synchronous rectification
N channel configuration for effective performance
100% avalanche reliability tested
Halogen free materials for safer disposal
Wide industrial temperature range support
Minimal on state resistance reduces power loss
RoHS compliant for environmental sustainability
Infineon

SiC N-Channel MOSFET, 132 A, 60 V, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1

Manufacturer:
Infineon
Manufacturer Part No:
IQE030N06NM5SCATMA1
Enrgtech Part No:
ET28373675
Warranty:
Manufacturer
£ 1.86

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Channel Type:

N

Maximum Continuous Drain Current:

132 A

Maximum Drain Source Voltage:

60 V

Series:

OptiMOS

Package Type:

PG-WHSON-8

Mounting Type:

Surface Mount

Pin Count:

8

Channel Mode:

Enhancement

Number of Elements per Chip:

1

Transistor Material:

SiC

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