This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 22 A
ADD
50% lower Qrr than other MOSFET suppliers
Lowers switching noise/EMI
This product is general usage and suitable for many different applications.
N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 FDMS86181
Manufacturer:
onsemi
Manufacturer Part No:
FDMS86181
Enrgtech Part No:
ET14519401
Warranty:
Manufacturer
£ 0.82
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
124 A
Maximum Drain Source Voltage:
100 V
Package Type:
PQFN8
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
12 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4V
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
125 W
Transistor Configuration:
Single
