

The Infineon MOSFET features an power transistor is an exemplary choice for applications requiring high efficiency and reliability. Optimised for synchronous rectification, this N channel device is part of the OptiMOS 5 series, renowned for its robust thermal performance and low on resistance. The device operates effectively at voltages of up to 80V, making it suitable for a wide range of industrial applications. With features such as 100% avalanche testing and a Pb free design compliant with RoHS standards, this product embodies both safety and sustainability in its manufacturing process. Its small footprint and high performance manifest in the advanced design that ensures superior thermal characteristics, presenting an excellent option for designers aiming to improve overall system efficiency.
Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces power losses
Robust thermal resistance for reliability
Avalanche tested for extreme conditions
Pb free lead plating for safety
Halogen free construction meets IEC standards
Qualified per JEDEC industry standards
N channel for easy circuit integration
Low on resistance reduces power losses
Robust thermal resistance for reliability
Avalanche tested for extreme conditions
Pb free lead plating for safety
Halogen free construction meets IEC standards
Qualified per JEDEC industry standards

SiC N-Channel MOSFET, 99 A, 80 V, 9-Pin PG-WHTFN-9 IQE050N08NM5CGSCATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IQE050N08NM5CGSCATMA1
Enrgtech Part No:
ET28373679
Warranty:
Manufacturer
£ 1.95
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
99 A
Maximum Drain Source Voltage:
80 V
Package Type:
PG-WHTFN-9
Series:
OptiMOS
Mounting Type:
Surface Mount
Pin Count:
9
Channel Mode:
Enhancement
Number of Elements per Chip:
1
Transistor Material:
SiC