N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK STD13N65M2

Channel Type:

N

Maximum Continuous Drain Current:

10 A

Maximum Drain Source Voltage:

650 V

Series:

MDmesh M2

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

430 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

110 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-25 V, +25 V

Length:

6.6mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Transistor Material:

Si

Typical Gate Charge @ Vgs:

17 nC @ 10 V

Width:

6.2mm

Height:

2.4mm

Forward Diode Voltage:

1.6V