The Infineon CoolSiC 2000 V SiC Trench MOSFET represents a cutting edge solution designed for high performance applications. Engineered with advanced .XT interconnection technology, it ensures optimal thermal management and efficiency, making it ideal for demanding environments. With a robust body diode, the MOSFET excels under hard commutation conditions, providing reliable operation in various applications including string inverters and EV charging systems. Its impressive specifications, including a continuous drain current of up to 89 A, underscore its capability to handle significant power loads, while its low switching losses contribute to overall system efficiency. This device has been rigorously validated for industrial applications, ensuring adherence to industry standards and reliability. Operates at high voltage of 2000 V
Very low on state resistance for efficiency
Benchmark gate threshold voltage for performance
Robust operation with well designed body diode
Validated for industrial use via JEDEC testing
Supports optimal thermal performance through design