Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 NTJD5121NT1G

Channel Type:

N

Maximum Continuous Drain Current:

300 mA

Maximum Drain Source Voltage:

60 V

Package Type:

SOT-363

Mounting Type:

Surface Mount

Pin Count:

6

Maximum Drain Source Resistance:

2.5 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

266 mW

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Transistor Material:

Si

Number of Elements per Chip:

2

Length:

2.2mm

Typical Gate Charge @ Vgs:

0.9 nC @ 4.5 V

Width:

1.35mm

Height:

1mm

Minimum Operating Temperature:

-55 °C