The Infineon IDL10G65C5XUMA2 generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improvedefficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation