FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole

Maximum Continuous Collector Current:

120 A

Maximum Collector Emitter Voltage:

650 V

Maximum Gate Emitter Voltage:

±20V

Maximum Power Dissipation:

600 W

Package Type:

TO-3PN

Mounting Type:

Through Hole

Channel Type:

N

Pin Count:

3

Transistor Configuration:

Single

Dimensions:

15.8 x 5 x 20.1mm

Minimum Operating Temperature:

-55 °C

Maximum Operating Temperature:

+175 °C