The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3
Manufacturer:
InfineonManufacturer Part No:
IHW50N65R6XKSA1
Enrgtech Part No:
ET21639109
Warranty:
Manufacturer
£ 2.69
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Maximum Continuous Collector Current:
83 A
Maximum Collector Emitter Voltage:
650 V
Maximum Gate Emitter Voltage:
±20V
Maximum Power Dissipation:
251 W
Package Type:
PG-TO247-3
Pin Count:
3
