The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure improves the robustness of the device.
600V, 5A, Low VCE(sat)
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Robust
RoHS compliant
BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
Manufacturer:
Bourns
Manufacturer Part No:
BIDD05N60T
Enrgtech Part No:
ET24166415
Warranty:
Manufacturer
£ 0.41
Checking for live stock
Maximum Continuous Collector Current:
5 A
Maximum Collector Emitter Voltage:
600 V
Maximum Gate Emitter Voltage:
±30V
Maximum Power Dissipation:
82 W
Number of Transistors:
1
Package Type:
TO-252
Configuration:
Single Diode
