Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 C3M0280090D
Manufacturer:
Wolfspeed
Manufacturer Part No:
C3M0280090D
Enrgtech Part No:
ET11001037
Warranty:
Manufacturer
£ 4.06
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Channel Type:
N
Maximum Continuous Drain Current:
11.5 A
Maximum Drain Source Voltage:
900 V
Package Type:
TO-247
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
360 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.5V
Minimum Gate Threshold Voltage:
1.8V
Maximum Power Dissipation:
54 W
Transistor Configuration:
Single
