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ipw60r090cfd7xksa1 Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 3-Pin TO-247 Infineon IPW60R090CFD7XKSA1
ipw60r090cfd7xksa1 Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 3-Pin TO-247 Infineon IPW60R090CFD7XKSA1
The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Infineon

Dual N-Channel MOSFET Transistor & Diode, 97 A, 650 V, 3-Pin TO-247 IPW60R090CFD7XKSA1

Manufacturer:
Infineon
Manufacturer Part No:
IPW60R090CFD7XKSA1
Enrgtech Part No:
ET21626919
Warranty:
Manufacturer
£ 4.02

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Channel Type:

N

Maximum Continuous Drain Current:

97 A

Maximum Drain Source Voltage:

650 V

Package Type:

TO-247

Series:

CoolMOS™

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

0.09 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4.5V

Number of Elements per Chip:

2

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