The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Ultra-low gate charge
100% avalanche tested
Zener-protected
SiC N-Channel MOSFET, 12 A, 1200 V, 3-Pin H2PAK-2 STH12N120K5-2
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STH12N120K5-2
Enrgtech Part No:
ET11002016
Warranty:
Manufacturer
£ 5.62
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Channel Type:
N
Maximum Continuous Drain Current:
12 A
Maximum Drain Source Voltage:
1200 V
Package Type:
H2PAK-2
Series:
STB37N60
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
0.69 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.9V
Transistor Material:
SiC
Number of Elements per Chip:
1
