Dual N-Channel MOSFET, 3.6 A, 80 V, 8-Pin SOIC IRF7380TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

3.6 A

Maximum Drain Source Voltage:

80 V

Series:

HEXFET

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

73 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

2 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Width:

4mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Length:

5mm

Number of Elements per Chip:

2

Typical Gate Charge @ Vgs:

15 nC @ 10 V

Minimum Operating Temperature:

-55 °C

Height:

1.5mm

Forward Diode Voltage:

1.3V