

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
700 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
PPAP Capable
Typ. RDS(on) = 63 mΩ
Higher system reliability at low temperature operation
Lower switching loss
PPAP Capable
Applications
HV DC/DC converter
End Products
On Board Charger
DC/DC Converter

N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK NVB072N65S3
Manufacturer:
onsemi
Manufacturer Part No:
NVB072N65S3
Enrgtech Part No:
ET17796730
Warranty:
Manufacturer
£ 3.06
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
44 A
Maximum Drain Source Voltage:
650 V
Package Type:
D2PAK (TO-263)
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
107 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
4.5V
Minimum Gate Threshold Voltage:
2.5V
Maximum Power Dissipation:
312 W
Transistor Configuration:
Single