N-Channel MOSFET, 1.2 A, 30 V, 3-Pin SOT-23 IRLML2803TRPBF

Channel Type:

N

Maximum Continuous Drain Current:

1.2 A

Maximum Drain Source Voltage:

30 V

Package Type:

SOT-23

Series:

HEXFET

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

250 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1V

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

540 mW

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

3.3 nC @ 10 V

Width:

1.4mm

Maximum Operating Temperature:

+150 °C

Number of Elements per Chip:

1

Length:

3.04mm

Transistor Material:

Si

Forward Diode Voltage:

1.2V

Height:

1.02mm

Minimum Operating Temperature:

-55 °C