N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK NTD5867NLT4G

Channel Type:

N

Maximum Continuous Drain Current:

20 A

Maximum Drain Source Voltage:

60 V

Package Type:

DPAK (TO-252)

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

50 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2.5V

Maximum Power Dissipation:

36 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Maximum Operating Temperature:

+150 °C

Length:

6.73mm

Typical Gate Charge @ Vgs:

15 nC @ 10 V

Width:

6.22mm

Transistor Material:

Si

Number of Elements per Chip:

1

Height:

2.38mm

Minimum Operating Temperature:

-55 °C