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bsc010n04lsiatma1 N-Channel MOSFET, 275 A, 40 V, 8-Pin TDSON-8 FL Infineon BSC010N04LSIATMA1
bsc010n04lsiatma1 N-Channel MOSFET, 275 A, 40 V, 8-Pin TDSON-8 FL Infineon BSC010N04LSIATMA1
The Infineon New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements. Monolithic integrated Schottky-like diode
Optimized for synchronous rectification
100% avalanche tested
Infineon

N-Channel MOSFET, 275 A, 40 V, 8-Pin TDSON-8 FL BSC010N04LSIATMA1

Manufacturer:
Infineon
Manufacturer Part No:
BSC010N04LSIATMA1
Enrgtech Part No:
ET21606505
Warranty:
Manufacturer
£ 0.68

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Channel Type:

N

Maximum Continuous Drain Current:

275 A

Maximum Drain Source Voltage:

40 V

Package Type:

TDSON-8 FL

Series:

OptiMOS™

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

0.00105 O

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

2V

Transistor Material:

Si

Number of Elements per Chip:

1

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