

The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.
Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces heat generation
Exceptional thermal resistance prevents overheating
100% avalanche tested for reliability
Pb free lead plating for eco friendly manufacturing
Halogen free construction meets regulations
N channel for easy circuit integration
Low on resistance reduces heat generation
Exceptional thermal resistance prevents overheating
100% avalanche tested for reliability
Pb free lead plating for eco friendly manufacturing
Halogen free construction meets regulations

SiC N-Channel MOSFET, 99 A, 80 V, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
Manufacturer:
Infineon
Manufacturer Part No:
IQE050N08NM5SCATMA1
Enrgtech Part No:
ET28373680
Warranty:
Manufacturer
£ 1.95
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
99 A
Maximum Drain Source Voltage:
80 V
Package Type:
PG-WHSON-8
Series:
OptiMOS
Mounting Type:
Surface Mount
Pin Count:
8
Channel Mode:
Enhancement
Number of Elements per Chip:
1
Transistor Material:
SiC