N-Channel MOSFET, 400 mA, 600 V, 3-Pin TO-92 STQ1HNK60R-AP

Channel Type:

N

Maximum Continuous Drain Current:

400 mA

Maximum Drain Source Voltage:

600 V

Series:

MDmesh, SuperMESH

Package Type:

TO-92

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

8.5 Ω

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.7V

Minimum Gate Threshold Voltage:

2.25V

Maximum Power Dissipation:

3 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-30 V, +30 V

Number of Elements per Chip:

1

Width:

3.94mm

Typical Gate Charge @ Vgs:

7 nC @ 10 V

Length:

4.95mm

Transistor Material:

Si

Maximum Operating Temperature:

+150 °C

Height:

4.95mm

Minimum Operating Temperature:

-55 °C