

The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a
Qualified to 175 °C
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
Avalanche rated, 100% tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

N-Channel MOSFET, 200 A, 55 V, 4-Pin LFPAK56E PSMN2R0-55YLHX
Manufacturer:
Nexperia
Manufacturer Part No:
PSMN2R0-55YLHX
Enrgtech Part No:
ET23140416
Warranty:
Manufacturer
£ 1.24
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Channel Type:
N
Maximum Continuous Drain Current:
200 A
Maximum Drain Source Voltage:
55 V
Package Type:
LFPAK56E
Mounting Type:
Surface Mount
Pin Count:
4
Number of Elements per Chip:
1