N-Channel MOSFET, 4 A, 20 V, 3-Pin TSMT-3 RUR040N02TL

Channel Type:

N

Maximum Continuous Drain Current:

4 A

Maximum Drain Source Voltage:

20 V

Package Type:

TSMT-3

Mounting Type:

Surface Mount

Pin Count:

3

Maximum Drain Source Resistance:

110 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

1.3V

Maximum Power Dissipation:

1 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-10 V, +10 V

Typical Gate Charge @ Vgs:

8 nC @ 4.5 V

Length:

2.9mm

Transistor Material:

Si

Number of Elements per Chip:

1

Maximum Operating Temperature:

+150 °C

Width:

1.6mm

Height:

0.8mm