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ipqc60r010s7xtma1 SiC N-Channel MOSFET, 50 A, 600 V, 22-Pin PG-HDSOP-22 Infineon IPQC60R010S7XTMA1
ipqc60r010s7xtma1 SiC N-Channel MOSFET, 50 A, 600 V, 22-Pin PG-HDSOP-22 Infineon IPQC60R010S7XTMA1
The Infineon MOSFET with cutting edge 600V CoolMOS SJ S7 Power Device represents a remarkable leap in MOSFET technology, specifically tailored for low frequency switching applications. Engineered with the utmost precision, this device offers unparalleled energy efficiency, making it an ideal choice for solid state relays, circuit breakers, and various power management systems. The advanced design, showcasing a compact footprint and superior heat dissipation capabilities, ensures optimal performance under demanding conditions. Recognised for its distinct advantages over traditional electromechanical components, this device integrates seamless switching with exceptional reliability. It is fully qualified according to JEDEC standards for industrial applications, providing reassurance of its robustness and dependability in a wide range of environments. Optimised for price and performance
High pulse current capability for robustness
Kelvin source pin enhances switching performance
Supports applications facing shock and vibration
Internal body diode minimises conduction losses
Accommodates top side cooling for better thermal performance
Infineon

SiC N-Channel MOSFET, 50 A, 600 V, 22-Pin PG-HDSOP-22 IPQC60R010S7XTMA1

Manufacturer:
Infineon
Manufacturer Part No:
IPQC60R010S7XTMA1
Enrgtech Part No:
ET28373730
Warranty:
Manufacturer
£ 24.18

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Channel Type:

N

Maximum Continuous Drain Current:

50 A

Maximum Drain Source Voltage:

600 V

Package Type:

PG-HDSOP-22

Series:

600V CoolMOS

Mounting Type:

Surface Mount

Pin Count:

22

Channel Mode:

Enhancement

Transistor Material:

SiC

Number of Elements per Chip:

1

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